S amHop Microelectronics C orp.
S T U/D1955NL
Arp,12 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
55V
F E AT UR E S
( m
W
) Max
I
D
10A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
55 @ V
G S
= 10V
80 @ V
G S
= 4.5V
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
D
G
S
G
D
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
a
(T
A
=25 C unles s otherwis e noted)
S ymbol
Vspike (d)
V
DS
V
GS
Limit
60
55
20
10
8
23
15
50
35
-55 to 175
W
C
Unit
V
V
V
A
A
A
A
25 C
70 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Ta= 25 C
Ta=70 C
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R
JC
R
JA
3
50
C /W
C /W
S T U/D1955NL
N-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 44V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 8A
V
GS
=4.5V, I
D
= 4A
V
DS
= 5V, V
GS
= 10V
V
DS
= 10V, I
D
= 8A
Min Typ
C
Max Unit
55
1
V
uA
100 nA
1.0
1.9
42
65
15
10
635
75
50
2.6
10.6
5.3
14.5
9.8
12.8
7.1
2.6
3.8
13
6
17
11
14
8
3
5
718
87
57
3.0
55
80
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
c
V
DS
=30V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= 30V
I
D
= 8 A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=15V, I
D
=8A,V
GS
=10V
V
DS
=15V, I
D
=8A,V
GS
=5V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V, I
D
= 8A
V
GS
=10V
2
S T U/D1955NL
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is = 15A
Min Typ Max Unit
1
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
V
G S
=10V
V
G S
=6V
V
G S
=8V
20
V
G S
=5V
16
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
15
T j=125 C
10
25 C
5
-55 C
12
V
G S
=4.5V
8
4
V
G S
=4V
V
G S
=3V
0
0
0.5
1
1.5
2
2.5
3
0
0
0.9
1.8
2.7
3.6
4.5
5.4
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1200
1.8
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
1000
1.6
1.4
1.2
1.0
0.8
0.6
-55
V
G S
=10V
I
D
=8A
C , C apacitance (pF )
800
C is s
600
400
200
0
C rs s
0
5
10
15
20
25
C os s
30
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
S T U/D1955NL
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
18
V
DS
=10V
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
15
12
9
6
3
0
0
5
10
15
20
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=30V
I
D
=8A
10
R
(O
DS
L
N)
im
it
10
10
1s
DC
ms
0m
s
11
0.1
0.03
V
G S
=10V
S ingle P ulse
T
A
=25 C
0.1
1
10
50 60
3
6
9
12
15
18
21 24
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
S T U/D1955NL
V
DD
t
on
V
IN
D
V
G S
R
GE N
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
6
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
10
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
P
DM
t
1
on
0.1
0.05
0.02
0.01
1.
2.
3.
4.
t
2
Single Pulse
0.0001
0.001
0.01
0.1
1
10
0.01
0.00001
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
嵌入式系统
